Twin-induced InSb nanosails : a convenient high mobility quantum system
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia)
Leturcq, Renaud (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes)
Rolland, Chloé (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Magen Dominguez, Cesar (Instituto de Nanociencia de Aragón)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Caroff, Philippe (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))

Date:	2016
Abstract:	Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm²·V⁻¹·s⁻¹. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb "nanosails" as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.
Grants:	Ministerio de Economía y Competitividad MAT2014-51480-ERC Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-1638
Rights:	Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Cs-corrected scanning transmission electron microscopy ; Hall measurements ; III-V semiconductor ; Molecular beam epitaxy ; Nanowires ; Quantum point contact
Published in:	Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.5b05125

Post-print 32 p, 3.3 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Experimental sciences > Catalan Institute of Nanoscience and Nanotechnology (ICN2)
Articles > Research articles
Articles > Published articles