Web of Science: 4 citas, Scopus: 7 citas, Google Scholar: citas
3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature
Li, Fan (University of Warwick)
Sharma, Yogesh (University of Warwick)
Walker, David (University of Warwick)
Hindmarsh, Steven (University of Warwick)
Jennings, Mike (University of Warwick)
Martin, David (University of Warwick)
Fisher, Craig (University of Warwick)
Gammon, Peter (University of Warwick)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Mawby, Phil (University of Warwick)

Fecha: 2016
Resumen: Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10Ω cm) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm/V · s) was achieved compared with the annealed devices.
Derechos: Tots els drets reservats.
Lengua: Anglès
Documento: article ; recerca ; acceptedVersion
Materia: 3C-SiC ; Channel mobility ; MOSFET ; Ohmic contact ; Reliability
Publicado en: IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192, ISSN 0741-3106

DOI: 10.1109/LED.2016.2593771

5 p, 602.1 KB

El registro aparece en las colecciones:
Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
Artículos > Artículos de investigación
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 Registro creado el 2019-03-01, última modificación el 2021-01-19

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