| Data: |
2016 |
| Resum: |
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10Ω cm) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm/V · s) was achieved compared with the annealed devices. |
| Drets: |
Tots els drets reservats.  |
| Llengua: |
Anglès |
| Document: |
Article ; recerca ; Versió acceptada per publicar |
| Matèria: |
3C-SiC ;
Channel mobility ;
MOSFET ;
Ohmic contact ;
Reliability |
| Publicat a: |
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192, ISSN 0741-3106 |
visitant ::
identificació
(University of Warwick)
