Web of Science: 8 cites, Scopus: 11 cites, Google Scholar: cites
3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature
Li, Fan (University of Warwick)
Sharma, Yogesh (University of Warwick)
Walker, David (University of Warwick)
Hindmarsh, Steven A (University of Warwick)
Jennings, Mike (University of Warwick)
Martin, David (University of Warwick)
Fisher, Craig (University of Warwick)
Gammon, Peter (University of Warwick)
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Mawby, Phil (University of Warwick)

Data: 2016
Resum: Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10Ω cm) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm/V · s) was achieved compared with the annealed devices.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió acceptada per publicar
Matèria: 3C-SiC ; Channel mobility ; MOSFET ; Ohmic contact ; Reliability
Publicat a: IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192, ISSN 0741-3106

DOI: 10.1109/LED.2016.2593771


Postprint
5 p, 602.1 KB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
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 Registre creat el 2019-03-01, darrera modificació el 2022-02-06



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