Web of Science: 3 cites, Scopus: 5 cites, Google Scholar: cites
3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature
Li, Fan (University of Warwick)
Sharma, Yogesh (University of Warwick)
Walker, David (University of Warwick)
Hindmarsh, Steven (University of Warwick)
Jennings, Mike (University of Warwick)
Martin, David (University of Warwick)
Fisher, Craig (University of Warwick)
Gammon, Peter (University of Warwick)
Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia)
Mawby, Phil (University of Warwick)

Data: 2016
Resum: Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. Here, we present a low resistivity (~3 × 10Ω cm) ohmic contact formed by directly depositing a Ti/Ni metal stack on n-type 3C-SiC without any extra annealing. For the first time, 3C-SiC lateral MOSFETs with asdeposited ohmic contacts were fabricated, and it turned out not only the ohmic contact is free from any interface voids, but also a higher field-effect mobility value (~80 cm/V · s) was achieved compared with the annealed devices.
Drets: Tots els drets reservats.
Llengua: Anglès.
Document: article ; recerca ; acceptedVersion
Matèria: 3C-SiC ; Channel mobility ; MOSFET ; Ohmic contact ; Reliability
Publicat a: IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192, ISSN 0741-3106

DOI: 10.1109/LED.2016.2593771


Postprint
5 p, 602.1 KB

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Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
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 Registre creat el 2019-03-01, darrera modificació el 2019-07-12



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