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Room-temperature spin hall effect in graphene/MoS2 van der Waals heterostructures
Safeer, C. K. (CIC NanoGUNE)
Ingla-Aynés, Josep (CIC NanoGUNE)
Herling, Franz (CIC NanoGUNE)
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia)
Vila Tusell, Marc (Institut Català de Nanociència i Nanotecnologia)
Ontoso, Nerea (CIC NanoGUNE)
Calvo, M. Reyes (IKERBASQUE. Basque Foundation for Science)
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Hueso, Luis E. (IKERBASQUE. Basque Foundation for Science)
Casanova, Fèlix (IKERBASQUE. Basque Foundation for Science)

Data: 2019
Resum: Graphene is an excellent material for long-distance spin transport but allows little spin manipulation. Transition-metal dichalcogenides imprint their strong spin-orbit coupling into graphene via the proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. Here, by combining Hall probes with ferromagnetic electrodes, we unambiguously demonstrate experimentally the spin Hall effect in graphene induced by MoS proximity and for varying temperatures up to room temperature. The fact that spin transport and the spin Hall effect occur in different parts of the same material gives rise to a hitherto unreported efficiency for the spin-to-charge voltage output. Additionally, for a single graphene/MoS heterostructure-based device, we evidence a superimposed spin-to-charge current conversion that can be indistinguishably associated with either the proximity-induced Rashba-Edelstein effect in graphene or the spin Hall effect in MoS. By a comparison of our results to theoretical calculations, the latter scenario is found to be the most plausible one. Our findings pave the way toward the combination of spin information transport and spin-to-charge conversion in two-dimensional materials, opening exciting opportunities in a variety of future spintronic applications.
Ajuts: Ministerio de Economía y Competitividad MDM-2016-0618
Ministerio de Economía y Competitividad MAT2015-65159-R
Ministerio de Economía y Competitividad MAT2017-82071-ERC
Ministerio de Economía y Competitividad SEV-2017-0706
European Commission 785219
Drets: Tots els drets reservats.
Llengua: Anglès
Document: Article ; recerca ; Versió acceptada per publicar
Matèria: Graphene ; Transition metal dichalcogenides ; Spintronics ; Spin Hall effect ; Rashba-Edelstein effect
Publicat a: Nano letters, Vol. 19, Issue 2 (February 2019) , p. 1074-1082, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.8b04368

35 p, 1.3 MB

El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2019-09-02, darrera modificació el 2022-12-01

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