Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Olsteins, Dags (Technical University of Denmark. Department of Energy Conversion and Storage)
Nagda, Gunjan (University of Copenhagen)
Carrad, Damon J. (Technical University of Denmark. Department of Energy Conversion and Storage)
Beznasyuk, Daria V. (Technical University of Denmark. Department of Energy Conversion and Storage)
Petersen, Christian E. N. (Technical University of Denmark. Department of Energy Conversion and Storage)
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia)
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Sand Jespersen, Thomas (Technical University of Denmark. Department of Energy Conversion and Storage)

Data:	2024
Resum:	New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.
Ajuts:	European Commission 716655 European Commission 866158 Agència de Gestió d'Ajuts Universitaris i de Recerca 2021/SGR-00457 Agencia Estatal de Investigación CEX2021-001214-S
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Llengua:	Anglès
Document:	Article ; recerca ; Versió sotmesa a revisió
Matèria:	Nanowires ; Selective area growth ; Semiconductors ; Multiplexers ; Reproducibility
Publicat a:	Nano letters, Vol. 24, Issue 22 (May 2024) , p. 6553-6559, ISSN 1530-6992

DOI: 10.1021/acs.nanolett.4c01038

Preprint 10 p, 11.4 MB

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