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| Pàgina inicial > Articles > Articles publicats > Revealing the quantum nature of the voltage-induced conductance changes in oxygen engineered yttrium oxide-based RRAM devices |
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) (Technische Universität Darmstadt. Institute of Materials Science) (Technische Universität Darmstadt. Institute of Materials Science) (Technische Universität Darmstadt. Institute of Materials Science) (Technische Universität Darmstadt. Institute of Materials Science) (Technische Universität Darmstadt. Department of Electrical Engineering and Information Technology) (Technische Universität Darmstadt. Department of Electrical Engineering and Information Technology) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) (Technische Universität Darmstadt. Institute of Materials Science)
| Data: | 2024 |
| Resum: | In this work, the quasi-analog to discrete transition occurring in the current-voltage characteristic of oxygen engineered yttrium oxide-based resistive random-access memory (RRAM) devices is investigated in detail. In particular, the focus of our research is not on the absolute conductance values of this characteristic but on the magnitude of its conductance changes occurring during the reset process of the device. It is found that the detected changes correspond to conductance values predominantly of the order of the quantum unit of conductance G = 2 e 2 / h, where e is the electron charge and h the Planck constant. This feature is observed even at conductance levels far above G , i. e. where electron transport is seemingly diffusive. It is also observed that such behavior is reproducible across devices comprising yttrium oxide layers with different oxygen concentrations and measured under different voltage sweep rates. While the oxygen deficiency affects the total number of quantized conductance states, the magnitude of the changes in conductance, close to 1 G , is invariant to the oxygen content of the functional layer. |
| Ajuts: | European Commission 101007321 European Commission 783176 Agencia Estatal de Investigación PID2022-139586NB-C41 Agencia Estatal de Investigación FJC2021-046808-I |
| Nota: | Altres ajuts: Open Access funding enabled and organized by Projekt DEAL. E.M. and J.S. acknowledge the support provided by the European project 20FUN06 MEMQuD, which has received funding from the EMPIR programme co-financed by the Participating States and from the European Union's Horizon 2020 research and innovation programme. |
| Drets: | Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.  |
| Llengua: | Anglès |
| Document: | Article ; recerca ; Versió publicada |
| Matèria: | Materials for devices ; Electronic devices |
| Publicat a: | Scientific reports, Vol. 14 (2024) , art. 1122, ISSN 2045-2322 |
