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13 p, 10.3 MB |
Heteroepitaxial growth of anatase (0 0 1) films on SrTiO3 (0 0 1) by PLD and MBE
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Crespo Villanueva, Adrián (Institut de Ciència de Materials de Barcelona) ;
Gallenberger, Julia (Technische Universität Darmstadt) ;
De Santis, M. (Université Grenoble Alpes) ;
Langlais, Veronique (Centre d'Elaboration de Matériaux et Etudes Structurales) ;
Carla, Francesco (Diamond Light Source) ;
Caicedo Roque, Jose Manuel (Institut Català de Nanociència i Nanotecnologia) ;
Rius Palleiro, Jordi (Institut de Ciència de Materials de Barcelona) ;
Torrelles Albareda, Xavier (Institut de Ciència de Materials de Barcelona)
The epitaxial growth of anatase (0 0 1) films deposited by pulsed laser deposition (PLD) and molecular beam epitaxy (MBE) on SrTiO (0 0 1) (STO) single crystals has been studied using X-ray diffraction and surface sensitivity UHV techniques. [...]
2023 -  10.1016/j.apsusc.2023.157586
Applied surface science, Vol. 632 (September 2023) , art. 157586
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2.
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11 p, 8.7 MB |
Defect engineering in solution-processed polycrystalline SnSe leads to high thermoelectric performance
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Liu, Yu (Institute of Science and Technology Austria) ;
Calcabrini, Mariano (Institute of Science and Technology Austria) ;
Yu, Yuan (I. Physikalisches Institut (IA)) ;
Lee, Seungho (Institute of Science and Technology Austria) ;
Chang, Cheng (Institute of Science and Technology Austria) ;
David, Jérémy (Institut Català de Nanociència i Nanotecnologia) ;
Ghosh, Tanmoy (Institute of Science and Technology Austria) ;
Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ;
Xie, Chenyang (Universitat Politècnica de Catalunya. Departament de Física) ;
Cojocaru-Mirédin, Oana (I. Physikalisches Institut (IA)) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Ibáñez, Maria (Institute of Science and Technology Austria)
SnSe has emerged as one of the most promising materials for thermoelectric energy conversion due to its extraordinary performance in its single-crystal form and its low-cost constituent elements. However, to achieve an economic impact, the polycrystalline counterpart needs to replicate the performance of the single crystal. [...]
2022 - 10.1021/acsnano.1c06720
ACS nano, Vol. 16, Issue 1 (January 2022) , p. 78-88
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3.
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11 p, 3.3 MB |
Properties of nanocrystalline silicon probed by optomechanics
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Navarro Urrios, Daniel (Institut Català de Nanociència i Nanotecnologia) ;
Colombano Sosa, Martin (Institut Català de Nanociència i Nanotecnologia) ;
Maire, Jeremie (Institut Català de Nanociència i Nanotecnologia) ;
Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia) ;
Arregui Bravo, Guillermo (Universitat Autònoma de Barcelona. Departament de Física) ;
Capuj, Nestor Eduardo (Universidad de La Laguna. Departamento de Física) ;
Devos, Arnaud (Centre national de la recherche scientifique (França). Institut d'Electronique, de Microélectronique et de Nanotechnologie) ;
Griol, Amadeu. (Universitat Politècnica de València. Nanophotonics Technology Center) ;
Bellieres, Laurent (Universitat Politècnica de València. Nanophotonics Technology Center) ;
Martínez, Alejandro (Universitat Politècnica de València. Nanophotonics Technology Center) ;
Grigoras, Kestutis (VTT Technical Research Centre of Finland Ltd) ;
Häkkinen, Teija (VTT Technical Research Centre of Finland Ltd) ;
Saarilahti, Jaakko (VTT Technical Research Centre of Finland Ltd) ;
Makkonen, Tapani (VTT Technical Research Centre of Finland Ltd) ;
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ;
Ahopelto, Jouni (VTT Technical Research Centre of Finland Ltd)
Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimize their functionality for devices and applications. [...]
2020 - 10.1515/nanoph-2020-0489
Nanophotonics, Vol. 9, issue 16 (Nov. 2020) , p. 4819-4829
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9 p, 2.2 MB |
Monolayered versus multilayered electroless NiP coatings : Impact of the plating approach on the microstructure, mechanical and corrosion properties of the coatings
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Salicio-Paz, A. (CIDETEC) ;
Grande, H. (CIDETEC) ;
Pellicer Vilà, Eva Maria (Universitat Autònoma de Barcelona. Departament de Física) ;
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ;
Fornell Beringues, Jordina (Universitat Autònoma de Barcelona. Departament de Física) ;
Offoiach, R. (Università degli Studi di Udine. Dipartimento Politecnico di Ingegneria e Architettura (Italy)) ;
Lekka, M. (Università degli Studi di Udine. Dipartimento Politecnico di Ingegneria e Architettura (Italy)) ;
García-Lecina, Eva (CIDETEC)
Electroless nickel-phosphorous (NiP) coatings were produced on low carbon steel substrates for a total plating time of 3 h. Different preparation modalities were pursued. Multilayered coatings were produced by stacking three layers of the same composition by successive electroless plating with rinsing steps in between. [...]
2019 - 10.1016/j.surfcoat.2019.04.013
Surface and coatings technology, Vol. 368 (June 2019) , p. 138-146
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7.
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7 p, 2.6 MB |
A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
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Li, Fan (University of Warwick) ;
Mawby, Philip A. (University of Warwick) ;
Song, Qiu (University of Warwick) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Shah, Vishal (University of Warwick) ;
Sharma, Yogesh (Dynex Semiconductor Ltd.) ;
Hamilton, Dean P. (De Montfort University) ;
Fisher, Craig (University of Warwick) ;
Gammon, Peter (University of Warwick) ;
Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242
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8.
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8 p, 743.4 KB |
Ptsi clustering in silicon probed by transport spectroscopy
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Mongillo, Massimo (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ;
Spathis, Panayotis (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ;
Katsaros, Georgios (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ;
De Franceschi, Silvano (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ;
Gentile, Pascal (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ;
Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ;
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. [...]
2014 - 10.1103/PhysRevX.3.041025
Physical Review, Vol. 3, issue. 4 (Dec. 2014) , art. e041025
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9.
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12 p, 1.9 MB |
Orientation symmetry breaking in self-assembled Ce1- : XGdxO2- y nanowires derived from chemical solutions
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Queraltó López, Albert (Institut de Ciència de Materials de Barcelona) ;
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ;
Martínez, Lidia (Instituto de Ciencia de Materiales de Madrid) ;
Magen Dominguez, Cesar (Universidad de Zaragoza. Instituto de Nanociencia y Materiales de Aragón) ;
Gibert, Marta (Université de Genève. Département de Physique de la Matière Quantique) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Hühne, Ruben (Institut für Metallische Werkstoffe) ;
Obradors, Xavier (Institut de Ciència de Materials de Barcelona) ;
Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona)
Understanding the growth mechanisms of nanostructures obtained from chemical solutions, a high-throughput production methodology, is essential to correlate precisely the growth conditions with the nanostructures' morphology, dimensions and orientation. [...]
2016 - 10.1039/c6ra23717g
RSC advances, Vol. 6, issue 99 (2016) , p. 97226-97236
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10.
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44 p, 7.2 MB |
Disentangling Epitaxial Growth Mechanisms of Solution Derived Functional Oxide Thin Films
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Queraltó López, Albert (Institut de Ciència de Materials de Barcelona) ;
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Obradors, Xavier (Institut de Ciència de Materials de Barcelona) ;
Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona)
This study investigates the mechanisms of epitaxial development and functional properties of oxide thin films (CeZrO , LaNiO, and BaSrTiO) grown on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) by the chemical solution deposition approach. [...]
2016 - 10.1002/admi.201600392
Advanced materials interfaces, Vol. 3, Núm. 18 (September 2016) , art. 1600392
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