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Pàgina inicial > Articles > Articles publicats > Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111) |
Data: | 2017 |
Resum: | We demonstrate the growth of twin-free BiTe and SbTe topological insulators by molecular beam epitaxy and a sizable reduction of the twin density in BiSe on lattice-matched BaF(111) substrates. Using X-ray diffraction, electron diffraction and atomic force microscopy, we systematically investigate the parameters influencing the formation of twin domains and the morphology of the films, and show that Se- and Te-based alloys differ by their growth mechanism. Optimum growth parameters are shown to result in intrinsically low-doped films, as probed by angle-resolved photoelectron spectroscopy. In contrast to previous approaches in which twin-free BiSe films are achieved by increasing the substrate roughness, the quality of our BiTe is superior on the flattest BaF substrates. This finding indicates that, during nucleation, the films not only interact with the topmost atomic substrate layer but also with buried layers that provide the necessary stacking information to promote a single twin, an observation that is supported by ab initio calculations. |
Ajuts: | European Commission 306652 European Commission 676598 European Commission 624893 Ministerio de Economía y Competitividad RYC-2015-18523 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-56 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-58 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-301 Agència de Gestió d'Ajuts Universitaris i de Recerca 2014/SGR-715 Ministerio de Economía y Competitividad MAT2013-46785-P Ministerio de Economía y Competitividad MAT2016-75952-R Ministerio de Economía y Competitividad MAT2013-46593-C6-5-P Ministerio de Economía y Competitividad MAT2016-78293-C6-2-R Ministerio de Economía y Competitividad FIS2015-64886-C5-3-P Ministerio de Economía y Competitividad FIS2015-67767-P Ministerio de Economía y Competitividad SEV-2013-0295 |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió acceptada per publicar |
Matèria: | Ab initio calculations ; Angle resolved photoelectron spectroscopy ; Growth mechanisms ; Growth parameters ; Lattice-matched ; Substrate layers ; Substrate roughness ; Topological insulators |
Publicat a: | Crystal Growth and Design, Vol. 17, Núm. 9 (September 2017) , p. 4655-4660, ISSN 1528-7505 |
Post-print 26 p, 1.8 MB |