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Depósito Digital de Documentos de la UAB Encontrados 5 registros  La búsqueda tardó 0.00 segundos. 
1.
6 p, 657.0 KB Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating / Russell, Stephen (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ; Fisher, Craig (University of Warwick. School of Engineering) ; Hamilton, Dean P. (University of Warwick. School of Engineering) ; Mawby, Philip A. (University of Warwick. School of Engineering) ; Jennings, Mike (University of Warwick. School of Engineering)
A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. [...]
2017 - 10.1109/JEDS.2017.2706321
IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261  
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2.
19 p, 1.0 MB P-type β-gallium oxide : a new perspective for power and optoelectronic devices / Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ; Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ; Ton-That, C. (University of Technology Sydney) ; Huynh, Tung Thanh (University of Technology Sydney) ; Phillips, Matthew (University of Technology Sydney) ; Russell, Stephen A. O. (University of Warwick) ; Jennings, M. R. (University of Warwick) ; Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . [...]
2017 - 10.1016/j.mtphys.2017.10.002
Materials today physics, Vol. 3 (December 2017) , p. 118-126  
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3.
15 p, 1.1 MB Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M. R. (University of Warwick) ; Russell, Stephen A. O. (University of Warwick) ; Teherani, Féréchteh Hosseini (Nanovation) ; Bove, Philippe (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Rogers, David J. (Nanovation)
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. [...]
2018 - 10.1117/12.2302576
Proceedings of SPIE, Vol. 10533 (February 2018) , art. 105331Q  
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4.
36 p, 830.9 KB Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M. R. (Swansea University) ; Russell, Stephen A. O. (University of Warwick) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia) ; Ton-That, C. (University of Technology Sydney) ; Teherani, Féréchteh Hosseini (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Bove, Philippe (Nanovation) ; Rogers, David J. (Nanovation)
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-GaO) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V) under typical indoor light. [...]
2019 - 10.1016/j.mtener.2019.100350
Materials today energy, Vol. 14 (December 2019) , art. 100350  
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5.
15 p, 1.3 MB High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs / Hamilton, Dean P. (University of Warwick) ; Jennings, M. R. (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Russell, Stephen A. O. (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Fisher, C. A. (University of Warwick) ; Mawby, Philip A. (University of Warwick)
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. [...]
2017 - 10.1109/TPEL.2016.2636743
IEEE transactions on power electronics, Vol. 32, Issue 10 (October 2017) , p. 7967-7979  
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