Bidirectional resonant tunneling spin pump
Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory)
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data:	2003
Resum:	We propose a mechanism for achieving bidirectional spin pumping in conventional nonmagnetic semiconductorresonant tunnelingheterostructures under zero magnetic field. The device is designed specifically to take advantage of the special spin configuration described by the Rashba effect in asymmetric quantum wells. It induces the simultaneous flow of oppositely spin-polarized current components in opposite directions through spin-dependent resonant tunneling, and can thus generate significant levels of spin current with very little net electrical current across the tunnel structure, a condition characterized by a greater-than-unity current spin polarization. We also present modeling results on temperature dependence and finite device size effects.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Electric currents ; Resonant tunneling ; Heterojunctions ; Magnetic fields ; Magnetic semiconductors ; Quantum effects ; Quantum wells ; Semiconductor device design ; Semiconductors ; Spin polarized transport
Publicat a:	Applied physics letters, Vol. 83, Issue 7 (August 2003) , p. 1391-1393, ISSN 1077-3118

DOI: 10.1063/1.1602158

4 p, 695.9 KB

El registre apareix a les col·leccions:
Articles > Articles de recerca
Articles > Articles publicats