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Pàgina inicial > Articles > Articles publicats > Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy |
Data: | 2002 |
Resum: | Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2films of metal-oxide-semiconductordevices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. Moreover, the comparison of the charge magnitude generated during current-limited stresses and stresses without current limit demonstrates that the observed BD induced negative charge is related to the structural damage created by the oxide BD. |
Drets: | Tots els drets reservats. |
Llengua: | Anglès |
Document: | Article ; recerca ; Versió publicada |
Matèria: | Charged currents ; Thin film devices ; Atomic force microscopy ; Dielectric breakdown ; Dielectric devices ; Dielectric thin films ; Metal insulator semiconductor structures ; Metallic thin films ; Physics demonstrations ; Thin films |
Publicat a: | Applied physics letters, Vol. 81, Issue 19 (October 2002) , p. 3615-3617, ISSN 1077-3118 |
4 p, 378.3 KB |