Web of Science: 1 cites, Scopus: 2 cites, Google Scholar: cites
Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia)
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Fontserè Recuenco, Abel (ALBA Laboratori de Llum de Sincrotró)
Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria)
Chen, H. (University of Warwick. School of Engineering)
Gammon, P.M. (University of Warwick. School of Engineering)
Jennings, M.R. (University of Warwick. School of Engineering)
Thomas, M. (University of Warwick. School of Engineering)
Fisher, C.A. (University of Warwick. School of Engineering)
Sharma, Y.K. (University of Warwick. School of Engineering)
Placidi, Marcel (Institut de Recerca en Energia de Catalunya)
Chmielowska, M. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
Chenot, S. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria)
Cordier, Y. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)

Data: 2015
Resum: The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (Ids > 1 A mmˉ¹) to be defined (0. 5 A mm¯¹ at 300 °C). The vertical breakdown voltage has been determined to be ~850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.
Nota: Número d'acord de subvenció MINECO/SEV-2013-0295
Drets: Tots els drets reservats.
Llengua: Anglès.
Document: article ; recerca ; acceptedVersion
Publicat a: Nanotechnology, Vol. 26, Issue 11 (March 2015) , art. 115203, ISSN 1361-6528

DOI: 10.1088/0957-4484/26/11/115203


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El registre apareix a les col·leccions:
Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Institut Català de Nanociència i Nanotecnologia (ICN2)
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2019-09-23, darrera modificació el 2020-02-08



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