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5 p, 667.4 KB |
Circuit reliability prediction : challenges and solutions for the device time-dependent variability characterization roadblock
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Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Diaz-Fortuny, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin-Lloret, Pablo (Instituto de Microelectrónica de Sevilla) ;
Toro-Frias, Antonio (Instituto de Microelectrónica de Sevilla) ;
Mateo, Diego (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ;
Barajas, Enrique (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ;
Aragones, Xavier (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla)
The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. [...]
Institute of Electrical and Electronics Engineers, 2021 -  10.1109/laedc51812.2021.9437920
2021 IEEE Latin America Electron Devices Conference, 2021, p. 1-4
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20 p, 736.9 KB |
Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors
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Feijoo, Pedro Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Iglesias, José M. (Universidad de Salamanca. Departamento de Física Aplicada) ;
Hamham, El Mokhtar (Universidad de Salamanca. Departamento de Física Aplicada) ;
Rengel, Raul (Universidad de Salamanca. Departamento de Física Aplicada) ;
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Hexagonal boron nitride encapsulation significantly improves carrier transport in graphene. This paper investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFETs) in terms of their intrinsic radio frequency (RF) performance, adding the effect of the series resistances at the terminals. [...]
2019 - 10.1109/TED.2018.2890192
IEEE Transactions on Electron Devices, Vol. 66, Issue 3 (March 2019) , p. 1567-1573
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Determination of the time constant distribution of a defect-centric time-dependent variability model for Sub-100-nm FETs
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Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla)
The origin of some time-dependent variability phenomena in FET technologies has been attributed to the charge carrier trapping/detrapping activity of individual defects present in devices. Although some models have been presented to describe these phenomena from the so-called defect-centric perspective, limited attention has been paid to the complex process that goes from the experimental data of the phenomena up to the final construction of the model and all its components, specifically the one that pertains to the time constant distribution. [...]
2022 - 10.1109/TED.2022.3198383
IEEE Transactions on Electron Devices, Vol. 69, issue 10 (Oct. 2022) , p. 5424-5429
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7 p, 481.4 KB |
Experimental time evolution study of the HfO2-based IMPLY gate operation
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Maestro Izquierdo, Marcos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Escudero, Manel (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rubio, Antonio 1954- (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica)
In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. [...]
2018 - 10.1109/TED.2017.2778315
IEEE Transactions on Electron Devices, Vol. 65, issue 2 (Feb. 2018) , p. 404-410
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8 p, 666.7 KB |
Statistical characterization of time-dependent variability defects using the maximum current fluctuation
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Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This article presents a new methodology to extract, at a given operation condition, the statistical distribution of the number of active defects that contribute to the observed device time-dependent variability, as well as their amplitude distribution. [...]
2021 - 10.1109/ted.2021.3086448
IEEE Transactions on Electron Devices, Vol. 68, issue 8 (Aug. 2021) , p. 4039-4044
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5 p, 691.3 KB |
DC characterization and fast small-signal parameter extraction of organic thin film transistors with different geometries
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Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Arnal Rus, August (Institut de Microelectrònica de Barcelona) ;
Ramon, Eloi (Institut de Microelectrònica de Barcelona) ;
Terés Terés, Lluís (Institut de Microelectrònica de Barcelona)
Organic Devices offer low-cost manufacturing and better flexibility, sustainability and solution-processability than their Si-based MOS counterparts, which make them suitable for new applications where those characteristics are an advantage. [...]
2020 - 10.1109/LED.2020.3021236
IEEE electron device letters, Vol. 41, Issue 10 (October 2020) , p. 1512-1515
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8 p, 2.6 MB |
Low-frequency noise parameter extraction method for single-layer graphene FETs
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Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Wei, Wei (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Pallecchi, Emiliano (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Vignaud, Dominique (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Happy, Henri (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ;
Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ;
Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ;
Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ;
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ;
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. [...]
2020 - 10.1109/TED.2020.2978215
IEEE transactions on electron devices, Vol. 67, issue 5 (May 2020) , p. 2093-2099
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6 p, 657.0 KB |
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating
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Russell, Stephen (University of Warwick. School of Engineering) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ;
Fisher, Craig (University of Warwick. School of Engineering) ;
Hamilton, Dean P. (University of Warwick. School of Engineering) ;
Mawby, Philip A. (University of Warwick. School of Engineering) ;
Jennings, Mike (University of Warwick. School of Engineering)
A method to improve thermal management of \beta-GaO FETs is demonstrated here via simulation of epitaxial growth on a 4H-SiC substrate. Using a recently published device as a model, the reduction achieved in self-heating allows the device to be driven at higher gate voltages and increases the overall performance. [...]
2017 - 10.1109/JEDS.2017.2706321
IEEE Journal of the Electron Devices Society, Vol. 5, issue 4 (july 2017) , p. 256-261
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7 p, 2.6 MB |
A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
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Li, Fan (University of Warwick) ;
Mawby, Philip A. (University of Warwick) ;
Song, Qiu (University of Warwick) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Shah, Vishal (University of Warwick) ;
Sharma, Yogesh (Dynex Semiconductor Ltd.) ;
Hamilton, Dean P. (De Montfort University) ;
Fisher, Craig (University of Warwick) ;
Gammon, Peter (University of Warwick) ;
Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242
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