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41.
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21 p, 1.0 MB |
High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga
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Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ;
Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 -  10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874
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42.
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8 p, 9.3 MB |
Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy
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Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ;
Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ;
Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ;
Garrido, Jose (Technische Universität München. Walter Schottky Institute) ;
De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ;
Magen Dominguez, Cesar (Universidad de Zaragoza. Instituto de Nanociencia y Materiales de Aragón) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ;
ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779
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43.
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10 p, 4.7 MB |
Phonon engineering in isotopically disordered silicon nanowires
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Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ;
Givan, Uri (Max-Planck-Institut für Mikrostrukturphysik) ;
Senz, Stephan (Max-Planck-Institut für Mikrostrukturphysik) ;
Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ;
Francoeur, S. (Polytechnique Montréal. Département de génie physique) ;
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ;
Itoh, K. M. (Keio University. Department of Applied Physics and Physico-Informatics) ;
Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ;
Seidman, D. N. (Northwestern University. Department of Materials Science and Engineering) ;
Moutanabbir, Oussama (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893
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44.
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19 p, 11.4 MB |
On-Surface Engineering of a Magnetic Organometallic Nanowire
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Ormaza, Maider (Université de Strasbourg) ;
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ;
Bachellier, Nicolas (Université de Strasbourg) ;
Abufager, Paula (Institut Català de Nanociència i Nanotecnologia) ;
Lorente Palacios, Nicolás (Institut Català de Nanociència i Nanotecnologia) ;
Limot, Laurent (Université de Strasbourg)
The manipulation of the molecular spin state by atom doping is an attractive strategy to confer desirable magnetic properties to molecules. Here, we present the formation of novel magnetic metallocenes by following this approach. [...]
2016 - 10.1021/acs.nanolett.5b04280
Nano letters, Vol. 16, Num. 1 (January 2016) , p. 588-593
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45.
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15 p, 3.9 MB |
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices
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Lähnemann, Jonas (University Grenoble Alpes) ;
Den Hertog, Martien (Institut Néel (Grenoble, França)) ;
Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ;
De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ;
Fournier, Thierry (Institut Néel (Grenoble, França)) ;
Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ;
Monroy, Eva (University Grenoble Alpes)
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. [...]
2016 - 10.1021/acs.nanolett.6b00806
Nano letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267
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46.
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18 p, 3.2 MB |
Reversible 2D Phase Transition Driven by an Electric Field : Visualization and Control on the Atomic Scale
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Wortmann, Ben (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ;
Vörden, D. V. (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ;
Graf, P. (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ;
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ;
Abufager, Paula (Institut Català de Nanociència i Nanotecnologia) ;
Lorente Palacios, Nicolás (Institut Català de Nanociència i Nanotecnologia) ;
Bobisch, Christian A (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ;
Möller, Rolf (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE))
We report on a reversible structural phase transition of a two-dimensional system that can be locally induced by an external electric field. Two different structural configurations may coexist within a CO monolayer on Cu(111). [...]
2016 - 10.1021/acs.nanolett.5b04174
Nano letters, Vol. 16, Núm. 1 (January 2016) , p. 528-533
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47.
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32 p, 3.3 MB |
Twin-induced InSb nanosails : a convenient high mobility quantum system
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De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ;
Leturcq, Renaud (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ;
Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes) ;
Rolland, Chloé (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ;
Magen Dominguez, Cesar (Instituto de Nanociencia de Aragón) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Caroff, Philippe (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. [...]
2016 - 10.1021/acs.nanolett.5b05125
Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833
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48.
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49.
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15 p, 1.7 MB |
Building Complex Kondo Impurities by Manipulating Entangled Spin Chains
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Choi, Deung-Jang (Max Planck Institute for the Structure and Dynamics of Matter) ;
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ;
Yan, Sichao (Max Planck Institute for the Structure and Dynamics of Matter) ;
Burgess, Jacob A. J. (Max Planck Institute for the Structure and Dynamics of Matter) ;
Rolf-Pissarczyk, Steffen (Max Planck Institute for the Structure and Dynamics of Matter) ;
Gauyacq, Jean-Pierre (Institut des Sciences Moléculaires d'Orsay (Paris, França)) ;
Lorente Palacios, Nicolás (Centro de Física de Materiales (Sant Sebastià, País Basc)) ;
Ternes, Markus (Max Planck Institute for Solid State Research) ;
Loth, Sebastian (Max Planck Institute for the Structure and Dynamics of Matter)
The creation of molecule-like structures in which magnetic atoms interact controllably is full of potential for the study of complex or strongly correlated systems. Here, we create spin chains in which a strongly correlated Kondo state emerges from magnetic coupling of transition-metal atoms. [...]
2017 - 10.1021/acs.nanolett.7b02882
Nano letters, Vol. 17, Núm. 10 (November 2017) , p. 6203-6209
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50.
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25 p, 7.5 MB |
Electrical and Thermal Transport in Coplanar Polycrystalline Graphene-hBN Heterostructures
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Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ;
Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya)) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Martínez Gordillo, Rafael (Aix-Marseille Université) ;
Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ;
Rabczuk, Timon (Bauhaus-Universität Weimar (Alemanya)) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. [...]
2017 - 10.1021/acs.nanolett.6b04936
Nano letters, Vol. 17 Núm. 3 (March 2017) , p. 1660-1664
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