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18.
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22 p, 880.5 KB |
Puzzling robust 2D metallic conductivity in undoped β-Ga2O3 thin films
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Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Rogers, David J. (Nanovation) ;
Teherani, Féréchteh Hosseini (Nanovation) ;
Rubio Lorente, Carles (Institut Català de Nanociència i Nanotecnologia) ;
Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ;
Von Bardeleben, Hans Jürgen (Institut des Nanosciences de Paris) ;
Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ;
Ton-That, C. (University of Technology Sydney) ;
Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Bove, Philippe (Nanovation) ;
Sandana, Éric V. (Nanovation) ;
Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
Here, we report the analogy of an extremely stable topological-like ultra-wide bandgap insulator, a solid that is a pure insulator in its bulk but has a metallic conductive surface, presenting a two-dimensional conductive channel at its surface that challenges our current thinking about semiconductor conductivity engineering. [...]
2019 -  10.1016/j.mtphys.2018.11.006
Materials today physics, Vol. 8 (March 2019) , p. 10-17
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19.
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15 p, 1.3 MB |
High-Temperature Electrical and Thermal Aging Performance and Application Considerations for SiC Power DMOSFETs
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Hamilton, Dean P. (University of Warwick) ;
Jennings, M. R. (University of Warwick) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Russell, Stephen A. O. (University of Warwick) ;
Hindmarsh, Steven A. (University of Warwick) ;
Fisher, C. A. (University of Warwick) ;
Mawby, Philip A. (University of Warwick)
The temperature dependence and stability of three different commercially-available unpackaged SiC Dmosfets have been measured. On-state resistances increased to 6 or 7 times their room temperature values at 350 °C. [...]
2017 - 10.1109/TPEL.2016.2636743
IEEE transactions on power electronics, Vol. 32, Issue 10 (October 2017) , p. 7967-7979
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20.
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22 p, 452.7 KB |
A solar transistor and photoferroelectric memory
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Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Lima, F. Anderson S. (Institut Català de Nanociència i Nanotecnologia) ;
Billon, Quentin (Institut Català de Nanociència i Nanotecnologia) ;
Shirley, Ian (Institut Català de Nanociència i Nanotecnologia) ;
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ;
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)
This study presents a new self-powered electronic transistor concept "the solar transistor. " The transistor effect is enabled by the functional integration of a ferroelectric-oxide thin film and an organic bulk heterojunction. [...]
2018 - 10.1002/adfm.201707099
Advanced functional materials, Vol. 28, issue 17 (April, 2018) , art. 1707099
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21.
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21 p, 746.1 KB |
Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor
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Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ;
Fontserè Recuenco, Abel (ALBA Laboratori de Llum de Sincrotró) ;
Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Escola d'Enginyeria) ;
Chen, H. (University of Warwick. School of Engineering) ;
Gammon, Peter (University of Warwick. School of Engineering) ;
Jennings, M. R. (University of Warwick. School of Engineering) ;
Thomas, M. (University of Warwick. School of Engineering) ;
Fisher, C. A. (University of Warwick. School of Engineering) ;
Sharma, Y. K. (University of Warwick. School of Engineering) ;
Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ;
Chmielowska, M. (Centre National de la Recherche Scientifique (França). Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ;
Chenot, S. (Centre National de la Recherche Scientifique (França). Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Escola d'Enginyeria) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Escola d'Enginyeria) ;
Cordier, Y. (Centre National de la Recherche Scientifique (França). Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. [...]
2015 - 10.1088/0957-4484/26/11/115203
Nanotechnology, Vol. 26, Issue 11 (March 2015) , art. 115203
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22.
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27 p, 1.3 MB |
Performance and stability of mixed FAPbI3(0.85)MAPbBr3(0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation
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Reyna, Yegraf (Institut Català de Nanociència i Nanotecnologia) ;
Salado, Manuel (Abengoa Research) ;
Kazim, Samrana (Abengoa Research) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Ahmad, Shahzada (Abengoa Research) ;
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)
We demonstrate for the first time, the real lifetime response of mixed halide perovskite solar cells (PSCs) for >1000 h under outdoor conditions and the exceptional photoresponse observed at low-light intensities attributed to the ionic-electronic nature of the material. [...]
2016 - 10.1016/j.nanoen.2016.10.053
Nano Energy, Vol. 30 (December 2016) , p. 570-579
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23.
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9 p, 2.3 MB |
PbZrTiO3 ferroelectric oxide as an electron extraction material for stable halide perovskite solar cells
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Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Xie, Haibing (Institut Català de Nanociència i Nanotecnologia) ;
Wang, Zaiwei (Ecole Polytechnique Fédérale de Lausanne) ;
Kim, Hui-Seon (Ecole Polytechnique Fédérale de Lausanne) ;
Shirley, Ian (Institut Català de Nanociència i Nanotecnologia) ;
Turren-Cruz, Silver-Hamill (Ecole Polytechnique Fédérale de Lausanne) ;
Morales Melgares, Anna (Institut Català de Nanociència i Nanotecnologia) ;
Saliba, Benedicte (Institut Català de Nanociència i Nanotecnologia) ;
Tanenbaum, David M. (Institut Català de Nanociència i Nanotecnologia) ;
Saliba, Michael (Ecole Polytechnique Fédérale de Lausanne) ;
Zakeeruddin, Shaik Mohammed (Ecole Polytechnique Fédérale de Lausanne) ;
Grätzel, Michael (Ecole Polytechnique Fédérale de Lausanne) ;
Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne) ;
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)
State-of-the-art halide perovskite solar cells employ semiconductor oxides as electron transport materials. Defects in these oxides, such as oxygen vacancies (O ), act as recombination centres and, in air and UV light, reduce the stability of the solar cell. [...]
2019 - 10.1039/c8se00451j
Sustainable energy & fuels, Vol. 3, Issue 2 (February 2019) , p. 382-389
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24.
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5 p, 602.1 KB |
3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature
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Li, Fan (University of Warwick) ;
Sharma, Yogesh (University of Warwick) ;
Walker, David (University of Warwick) ;
Hindmarsh, Steven A. (University of Warwick) ;
Jennings, Mike (University of Warwick) ;
Martin, David (University of Warwick) ;
Fisher, Craig (University of Warwick) ;
Gammon, Peter (University of Warwick) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - 10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192
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25.
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26.
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5 p, 1.9 MB |
Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
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Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica) ;
Perez-Tomas, Amador (Centro Nacional de Microelectrónica) ;
Placidi, Marcel (Centro Nacional de Microelectrónica) ;
Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ;
Baron, N. (Centre National de la Recherche Scientifique (França)) ;
Chenot, S. (Centre National de la Recherche Scientifique (França)) ;
Cordier, Y. (Centre National de la Recherche Scientifique (França)) ;
Moreno, J. C. (Centre National de la Recherche Scientifique (França)) ;
Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4
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27.
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205 p, 7.9 MB |
Novel materials and processes for gate dielectrics on silicon carbide
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Perez-Tomas, Amador ;
Godignon, Philippe, dir. (Institut de Microelectrònica de Barcelona)
There is considerable evidence of the need for a semiconductor technology which exceeds the limitations imposed by silicon across a wide spectrum of industrial applications. Wide bandgap semiconductor, such as silicon carbide (SiC), gallium nitride (GaN) and diamond, offer the potential to overcome both the temperature and voltage blocking limitations of Si. [...]
Bellaterra : Universitat Autònoma de Barcelona, 2007
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