Articles

Articles 34 registres trobats  inicianterior25 - 34  anar al registre: La cerca s'ha fet en 0.05 segons. 
25.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ; Givan, Uri (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, Stephan (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K. M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D. N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, Oussama (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  
26.
10 p, 908.2 KB Thermal conductivity of MoS2 polycrystalline nanomembranes / Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ; Graczykowski, Bartlomiej (Institut Català de Nanociència i Nanotecnologia) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Saleta Reig, David (Institut Català de Nanociència i Nanotecnologia) ; Sachat, Alexandros el (Universitat Autònoma de Barcelona. Departament de Física) ; Reparaz, Juan Sebastian (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya)) ; Quey, Romain (Centre national de la recherche scientifique. École nationale supérieure des mines de Saint-Étienne) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Heat conduction in 2D materials can be effectively engineered by means of controlling nanoscale grain structure. Afavorable thermal performance makes these structures excellent candidates for integrated heat management units. [...]
2016 - 10.1088/2053-1583/3/3/035016
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35016  
27.
20 p, 1.8 MB Thermal and transport properties of pristine single-layer hexagonal boron nitride : a first principles investigation / Illera, Sergio (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
Molecular dynamics is used in combination with density functional theory to determine the thermal transport properties of the single-layer hexagonal boron nitride (SL h-BN) from ab initio calculations. [...]
2017 - 10.1103/PhysRevMaterials.1.044006
Physical review materials, Vol. 1, issue 4 (Sep. 2017) , art. 44006
2 documents
28.
8 p, 3.3 MB Thermoelectric properties of semiconductor-metal composites produced by particle blending / Liu, Yu (Institut de Recerca en Energia de Catalunya) ; Cadavid, Doris (Institut de Recerca en Energia de Catalunya) ; Ibáñez, Maria (Empa-Swiss Federal Laboratories for Materials Science and Technology) ; Ortega, Silvia (Institut de Recerca en Energia de Catalunya) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Dobrozhan, Oleksandr (Institut de Recerca en Energia de Catalunya) ; Kovalenko, Maksym V. (Institute of Inorganic Chemistry (Bratislava, Eslovàquia)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Cabot, Andreu (Institut de Recerca en Energia de Catalunya)
In the quest for more efficient thermoelectric material able to convert thermal to electrical energy and vice versa, composites that combine a semiconductor host having a large Seebeck coefficient with metal nanodomains that provide phonon scattering and free charge carriers are particularly appealing. [...]
2016 - 10.1063/1.4961679
APL materials, Vol. 4, Núm. 10 (January 2016) , p. 104813  
29.
18 p, 2.2 MB Solution-based synthesis and processing of Sn- and Bi-doped Cu₃SbSe₄ nanocrystals, nanomaterials and ring-shaped thermoelectric generators / Liu, Yu (Institut de Recerca en Energia de Catalunya) ; Ortega, Silvia (Institut de Recerca en Energia de Catalunya) ; Cadavid, Doris (Institut de Recerca en Energia de Catalunya) ; Ibáñez, Maria (ETH Zürich. Institute of Inorganic Chemistry) ; Xi, Lili (Chinese Academy of Sciences. Shanghai Institute of Ceramics) ; De Roo, Jonathan (Ghent University. Department of Inorganic and Physical Chemistry) ; López Peña, Antonio M. (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Cabezas, Ignasi (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Luo, Zhishan (Institut de Recerca en Energia de Catalunya) ; Dun, Chaochao (Wake Forest University. Center for Nanotechnology and Molecular Materials) ; Dobrozhan, Oleksandr (Institut de Recerca en Energia de Catalunya) ; Zhang, Wenqing (Chinese Academy of Sciences. Shanghai Institute of Ceramics) ; Martins, José (Ghent University. Department of Organic and Marcromolecular Chemistry) ; Kovalenko, Maksym V. (ETH Zürich. Institute of Inorganic Chemistry) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Noriega, German (Cidete Ingenieros S.L. (Vilanova i la Geltrú - España)) ; Song, Ji-Ming (Anhui University. School of Chemistry & Chemical Engineering) ; Cabot, Andreu (Institut de Recerca en Energia de Catalunya) ; Institució Catalana de Recerca i Estudis Avançats
Copper-based chalcogenides that comprise abundant, low-cost, and environmental friendly elements are excellent materials for a number of energy conversion applications, including photovoltaics, photocatalysis, and thermoelectrics (TE). [...]
2017 - 10.1039/c6ta08467b
Journal of materials chemistry, Vol. 5, Issue 6 (February 2017) , p. 2592-2602  
30.
18 p, 3.0 MB Thermal transport in porous Si nanowires from approach-to-equilibrium molecular dynamics calculations / Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dettori, Riccardo (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Melis, Claudio (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Colombo, Luciano (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
We study thermal transport in porous Si nanowires (SiNWs) by means of approach-to-equilibrium molecular dynamics simulations. We show that the presence of pores greatly reduces the thermal conductivity, κ, of the SiNWs as long mean free path phonons are suppressed. [...]
2016 - 10.1063/1.4955038
Applied physics letters, Vol. 109, Issue 1 (Jul. 2016) , p. 131071-131074  
31.
4 p, 503.9 KB Nondestructive multlple breakdown events in very thin SI02 films / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Farrés i Berenguer, Esteve (Universitat Autònoma de Barcelona. Departament de Física) ; Placencia Millan, Iolanda (Universitat Autònoma de Barcelona. Departament de Física) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. [...]
1989 - 10.1063/1.102396
Applied physics letters, Vol. 55, Issue 2 (July 1989) , p. 128-130  
32.
4 p, 252.9 KB Memory and nonlocal effects in heat transport : from diffusive to ballistic regimes / Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
The authors discuss a generalized transportmodel including memory and nonlocal effects, which aims to describe the transition of heat transport from the diffusive regime to the ballistic regime. By using an effective thermal conductivity depending on the Knudsen number, they describe in a single equation the behavior of conductivity in terms of the system size and a reduction in the limit flux through nanoscale devices.
2007 - 10.1063/1.2645110
Applied physics letters, Vol. 90, Issue 8 (February 2007) , p. 083109/1-083109/3  
33.
4 p, 337.7 KB Cross-plane thermal conductivity reduction of vertically uncorrelated Ge/Si quantum dot superlattices / Álvarez Quintana, Jaime (Universitat Autònoma de Barcelona. Departament de Física) ; Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Rodríguez-Viejo, Javier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; Lacharmoise, Paul Dominique (Institut de Ciència de Materials de Barcelona) ; Bernardi, Alessandro (Institut de Ciència de Materials de Barcelona) ; Goñi, Alejandro (Institut de Ciència de Materials de Barcelona) ; Alonso Carmona, Maria Isabel (Institut de Ciència de Materials de Barcelona) ; American Physical Society
A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same Si spacer of 20nm but good vertical dot alignment. [...]
2008 - 10.1063/1.2957038
Applied physics letters, Vol. 93, Issue 1 (July 2008) , p. 013112/1-013112/3  
34.
4 p, 256.1 KB Pore-size dependence of the thermal conductivity of porous silicon : a phonon hydrodynamic approach / Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; Sellitto, A. (University of Basilicata. Department of Mathematics and Computer Science) ; American Physical Society
Phononhydrodynamics is used to analyze the influence of porosity and of pore size on reduction in thermal conductivity in porous silicon, with respect to crystalline silicon. The expressions predict that the thermal conductivity is lower for higher porosity and for smaller pore radius, as a consequence of phononballisticeffects. [...]
2010 - 10.1063/1.3462936
Applied physics letters, Vol. 97, Issue 3 (July 2010) , p. 33103  

Articles : 34 registres trobats   inicianterior25 - 34  anar al registre:
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