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Resultats globals: 21 registres trobats en 0.03 segons.
Articles, 3 registres trobats Materials didàctics, 18 registres trobats

Articles	3 registres trobats

6 p, 1.6 MB

A study on free-standing 3C-SiC bipolar power diodes / Li, Fan (University of Warwick. School of Engineering) ; Renz, Arne Benjamin (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick. School of Engineering) ; Gammon, Peter (University of Warwick. School of Engineering) ; La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi) ; Jennings, Mike (Swansea University. College of Engineering) ; Mawby, Philip (University of Warwick. School of Engineering)
A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. [...]
2021 - DOI (Digital Object Identifier)

10.1063/5.0054433
Applied physics letters, Vol. 118, issue 24 (June 2021) , art. 242101

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7 p, 2.6 MB

A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - DOI (Digital Object Identifier)

10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242

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5 p, 602.1 KB

3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven A. (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - DOI (Digital Object Identifier)

10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192

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